A complete design flow starting from the technological process development up to the fabrication of digital circuits is presented.\r\nThe aim of this work is to demonstrate the GaAs Enhancement/Depletion (E/D) double stop-etch technology implementation\r\nfeasibility for digital applications, aimed at mixed signal circuit integration. On the basis of the characterization of small E/D\r\ndevices with different Gate peripheries, developed by the SELEX-SI foundry, and the analysis of several GaAs-based logical families,\r\nthe most suitable logic for the available technology has been selected. Then, simple test vehicles (level shifters, NOR logic gates and\r\nD Flip-Flops) have been designed, realized, and measured to validate the design strategy applied to the GaAs E/D process. These\r\nlogical circuits are preliminary to the design of a more complex serial-to-parallel converter, to be implemented onto the same chip\r\ntogether with RF analog blocks, such as stepped attenuators and phase shifters.
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